SMD Type
IC
IC
MOSFET
Product specification
SI4410DY
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
(NOTE 2)
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
=0V,I
S
=2.3A
0.825
V
DS
= 15V, I
D
= 10A,V
GS
= 10V
V
DD
=25V,I
D
=1A,V
GS
=10V,
R
L
=25Ω,R
GEN
=6Ω
V
DS
= 15V, V
GS
= 0V,f =1.0MHZ
Test conditions
V
GS
=0V,I
D
=250uA
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
GS
=V
DS
,I
D
=250uA
V
GS
=10V,I
D
=10A
V
GS
=4.5V,I
D
=5A
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Drain-Source Diode Forward Current (NOTE 2)
Diode Forward Voltage
Note: 1. Surface Mounted on FR4 Board
2. Pulse Test:Pulse Width≤300μs,Duty Cycle≤2%
(NOTE 2)
(NOTE 2)
V
DS
=5V,V
GS
=10V
V
DS
=10V,I
D
=10A
20
27
1350
340
125
30
20
100
80
22
5
4
2.3
1.2
60
1
Min
20
1
±100
3
0.0135
0.02
Typ
Max
Unit
V
μA
nA
V
Ω
Ω
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Drain- Source on-state Resistance (NOTE 2)
■
Marking
Marking
4410
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TYSEMI [ TY Semiconductor Co., Ltd ]
