Product specification
KMBT3906
(MMBT3906)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Epitaxial planar die construction
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector- Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current- Continuous
Collector Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Rating
-40
-40
-5
-0.2
0.3
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector- emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
Ic
EO
I
EBO
h
FE
Ic= -100 ìA
Ic= -1 mA
I
E
= -100 ìA
Testconditons
I
E
=0
I
B
=0
I
C
=0
Min
-40
-40
-5
-0.1
-50
-0.1
100
60
-0.3
-0.95
35
35
225
75
250
MHz
ns
V
V
ns
300
Typ
Max
Unit
V
V
V
A
nA
A
V
CB
= -40 V , I
E
=0
V
CE
= -40 V , V
BE(off)
=-3V
V
EB
= -5V , I
C
=0
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE(sat)
I
C
=-50 mA, I
B
= -5mA
V
BE(sat)
I
C
=-50 mA, I
B
= -5mA
t
d
t
r
t
s
t
f
f
T
V
CC
=-3.0V,V
BE
=0.5V
I
C
=-10mA,I
B1
=-1.0mA
V
CC
=-3.0V,I
C
=-10mA
I
B1
=I
B2
=-1.0mA
V
CE
= -20V, I
C
= -10mA, f=100MHz
Marking
Marking
2A
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
