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IRLML6402PBF 参数 Datasheet PDF下载

IRLML6402PBF图片预览
型号: IRLML6402PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 超低导通电阻的P沟道MOSFET可在磁带和卷轴 [Ultra Low On-Resistance P-Channel MOSFET Available in Tape and Reel]
分类和应用: 晶体晶体管开关脉冲光电二极管
文件页数/大小: 2 页 / 219 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号IRLML6402PBF的Datasheet PDF文件第1页  
Product specification
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
IRLML6402PbF
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.40
6.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250μA
-0.009 ––– V/°C Reference to 25°C, I
D
= -1mA
‚
0.050 0.065
V
GS
= -4.5V, I
D
= -3.7A
‚
Ω
0.080 0.135
V
GS
= -2.5V, I
D
= -3.1A
‚
-0.55 -1.2
V
V
DS
= V
GS
, I
D
= -250μA
––– –––
S
V
DS
= -10V, I
D
= -3.7A
‚
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -25
V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
8.0
12
I
D
= -3.7A
1.2 1.8
nC V
DS
= -10V
2.8 4.2
V
GS
= -5.0V
‚
350 –––
V
DD
= -10V
48 –––
I
D
= -3.7A
ns
588 –––
R
G
= 89Ω
381 –––
R
D
= 2.7Ω
633 –––
V
GS
= 0V
145 –––
pF
V
DS
= -10V
110 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
29
11
-1.3
A
-22
-1.2
43
17
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = -100A/μs
‚
D
S
‚
Notes:

Repetitive rating; pulse width limited by
max. junction temperature.
ƒ
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
‚
Pulse width
400μs; duty cycle
2%.
„
Starting T
J
= 25°C, L = 1.65mH
R
G
= 25Ω, I
AS
= -3.7A.
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