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IRLML6401TRPBF 参数 Datasheet PDF下载

IRLML6401TRPBF图片预览
型号: IRLML6401TRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体晶体管开关脉冲光电二极管PC
文件页数/大小: 2 页 / 236 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号IRLML6401TRPBF的Datasheet PDF文件第1页  
Product specification  
IRLML6401PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
-12 ––– –––  
Conditions  
VGS = 0V, ID = -250µA  
V(BR)DSS  
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient  
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 0.050  
––– ––– 0.085  
––– ––– 0.125  
-0.40 -0.55 -0.95  
8.6 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -4.3A ‚  
VGS = -2.5V, ID = -2.5A ‚  
VGS = -1.8V, ID = -2.0A ‚  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -4.3A  
RDS(on)  
Static Drain-to-Source On-Resistance  
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
VDS = -12V, VGS = 0V  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
VDS = -9.6V, VGS = 0V, TJ = 55°C  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -8.0V  
IGSS  
VGS = 8.0V  
ID = -4.3A  
Qg  
––– 10  
15  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 1.4 2.1  
––– 2.6 3.9  
––– 11 –––  
––– 32 –––  
––– 250 –––  
––– 210 –––  
––– 830 –––  
––– 180 –––  
––– 125 –––  
nC VDS = -10V  
VGS = -5.0V‚  
VDD = -6.0V  
ns  
ID = -1.0A  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RD = 6.0Ω  
RG = 89‚  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF VDS = -10V  
ƒ = 1.0MHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
MOSFET symbol  
showing the  
-1.3  
-34  
––– –––  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– -1.2  
V
TJ = 25°C, IS = -1.3A, VGS = 0V ‚  
––– 22  
––– 8.0  
33  
12  
ns  
TJ = 25°C, IF = -1.3A  
Qrr  
nC di/dt = -100A/µs ‚  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,  
steady state.  
‚ Pulse width 300µs; duty cycle 2%.  
„ Starting TJ = 25°C, L = 3.5mH  
RG = 25, IAS = -4.3A.  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
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