SMD Type
Product specification
FDN336P
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-1.3 A, -20 V. R
DS(ON)
= 0.20
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.27
Ω
@ V
GS
= -2.5 V.
Low gate charge (3.6 nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
6
33
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
R
θ
JA
R
θ
JC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T
A
= 25
o
C unless other wise noted
FDN336P
-20
±8
Units
V
V
A
- Continuous
- Pulsed
-1.3
-10
(Note 1a)
(Note 1b)
Maximum Power Dissipation
0.5
0.46
-55 to +150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
