SMD Type
Product specification
FDN335N
Electrical Characteristics
Symbol
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µ
A
I
D
= 250
µ
A,Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min Typ
20
14
Max
Units
V
mV/
°
C
Off Characteristics
1
100
-100
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A,Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 1.7 A
V
GS
= 4.5 V, I
D
= 1.7 A,T
J
= 125
°
C
V
GS
= 2.5 V, I
D
= 1.5 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.5 A
0.4
0.9
-3
0.055
0.079
0.078
1.5
V
mV/
°
C
0.070
0.120
0.100
Ω
I
D(on)
g
FS
8
7
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
310
80
40
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
5
8.5
11
3
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.7 A,
V
GS
= 4.5 V,
3.5
0.55
0.95
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.42
0.7
1.2
A
V
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when
mounted on a 0.02 in
2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
b) 270°C/W when mounted
on a minimum pad.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
