Product specification
KS1A THRU KS1D
(ES1A THRU ES1D)
Features
For surface mount applications
Low profile package
Ideally suited for use in
very high frequency switching power supplies,
inverters and as a free wheeling diodes
Ultrafast recovery times for high efficiency
Low forward voltage
Low leakage current
Glass passivated chip junction
1.575
1.397
2
DO-214AC(SMA)
4.597
3.988
Unit: mm
3.93
3.73
1
2.896
2.489
1.67
1.47
5.283
4.775
2.38
2.18
5.49
5.29
Recommended
Land Pattern
2.438
1.981
1.524
0.762
0.203
0.051
0.305
0.152
Absolute Maximum Ratings T
A
=25
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
=25
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current at rated
T
A
= 25
V
F
I
R
t
rr
T
A
= 25
T
A
= 100
Maximum stored charge
T
A
= 25
T
A
= 100
Typical junction capacitance *2
Maximum thermal resistance *1
Operating and storage temperature range
R
R
*3
C
J
JA
JL
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
KS1A
50
35
50
KS1B
100
70
100
1
30
0.92
5
100
15
25
35
10
25
7
85
35
KS1C
150
105
150
KS1D
200
140
200
Unit
V
V
V
A
A
V
uA
ns
ns
T
A
= 100
Maximum reverse recovery time *1
Reverse recovery time
t
rr
*3
Q
rr
nC
pF
/W
T
J,
T
STG
-55 to 150
*1 Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
*2 Measured at 1.0MHz and applied reverse voltage of 4.0V
*3 t
rr
and Q
rr
measured at: I
F
=0.6A, V
R
=30V, d
i
/d
t
=50A/ms, I
rr
=10% I
RM
for measurement of t
rr
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TYSEMI [ TY Semiconductor Co., Ltd ]
