SMD Type
MOSFET
Product specification
BSS138
■
Features
●
V
DS (V)
= 50V
●
I
D
= 0.22 A
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
●
R
DS(ON)
≤
6Ω (V
GS
= 4.5V)
+0.1
1.3
-0.1
●
R
DS(ON)
≤
3.5Ω (V
GS
= 10V)
0.4
3
+0.05
0.1
-0.01
0.97
1.Base
1. Gate
2.Emitter
2. Source
+0.1
0.38
-0.1
0-0.1
+0.1
-0.1
3. Drain
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-to-source voltage
Gate-to-source voltage
Drain Current
– Continuous
– Pulsed
Total power dissipation @ T
A
= 25℃
Thermal resistance,junction-to-ambient
Operating and storage temperature range
P
D
R
θJA
T
J
, T
stg
Symbol
V
DSS
V
GS
I
D
Rating
50
±20
200
800
300
417
-55 to 150
Unit
V
V
mA
mA
mW
℃/W
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-to-source breakdown voltage
Zero Gate Voltage Drain Current
Gate-source leakage current
Gate-source threshold voltage
Static drain-to-source on-rResistance
Forward transconductance
Input capacitance
Output capacitance
Transfer capacitance
Turn-on delay time
Turn-off delay time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
DD
= 30 V, I
D
= 0.2 A,R
GEN
= 50
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
Test conditons
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 50 V, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= V
GS
, I
D
= 1.0 mA
V
GS
= 10V, I
D
= 0.22A
V
GS
= 4.5V, I
D
= 0.22A
V
DS
= 25 V, I
D
= 200 mA, f = 1.0 kHz
100
50
25
8
20
20
0.8
Min
50
0.5
±0.1
1.5
3.5
6
Typ
Max
Unit
V
μA
μA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
■
Marking
Marking
J1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
