SMD Type
Transistors
Product specification
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Symbol
I
CBO
V
CB
= 30 V, I
E
= 0
BCX54,BCX55,BCX56
Testconditons
Min
Typ
Max
100
10
100
63
63
40
63
100
160
250
0.5
1
130
1.3
1.6
V
V
MHz
250
Unit
nA
ìA
nA
V
CB
= 30 V, I
E
= 0; Tj = 125
Emitter cutoff current
DC current gain
I
EBO
h
FE
V
EB
= 5 V, I
C
= 0
I
C
= 5 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
DC current gain BCX54-10,BCX55-10,BCX56-10
BCX54-16,BCX55-16,BCX56-16
Collector-emitter saturation voltage
Base to emitter voltage
Transition frequency
DC current gain ratio of the
complementary pairs
h
FE
I
C
= 150 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
V
CE(sat)
I
C
= 500 mA; I
B
= 50 mA
V
BE
f
T
h
FE
h
FE
I
C
= 500 mA; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2V
h
FE
Classification
TYPE
Marking
TYPE
Marking
TYPE
Marking
BCX54
BA
BCX55
BE
BCX56
BH
BCX54-10
BC
BCX55-10
BG
BCX56-10
BK
BCX54-16
BD
BCX55-16
BM
BCX56-16
BL
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TYSEMI [ TY Semiconductor Co., Ltd ]
