SMD Type
Transistors
IC
Product specification
BCP54; BCP55; BCP56
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
Symbol
I
CBO
I
EBO
Testconditons
I
E
= 0 A; V
CB
= 30 V
I
E
= 0 A; V
CB
= 30 V; Tj = 150
I
C
= 0 A; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
DC current gain
h
FE
I
C
=150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
DC current gain
BCP54-10; BCP55-10; BCP56-10
BCP54-16; BCP55-16; BCP56-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the complementary pairs
V
CEsat
V
BE
f
T
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 0.5 A; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
|I
C
| = 150 mA;|V
CE
| = 2 V
130
1.6
h
FE
V
CE
= 2 V; I
C
= 150 mA
63
100
160
250
500
1
mV
V
MHz
63
63
40
250
Min
Typ
Max
100
10
100
Unit
nA
ìA
nA
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
