SMD Type
Transistors
IC
Product specification
BC856,BC857,BC858
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC856
BC857
DC current gain
BC856A,BC857A
BC856B,BC857B,BC858B
BC857C
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -100 mA; I
B
= -5 mA; *
Base-emitter saturation voltage
V
BE(sat)
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -100 mA; I
B
= -5 mA; *
Base-emitter voltage
Collector capacitance
Transition frequency
Noise figure
* Pulse test: tp
300µs, ä
0.02.
V
BE
C
C
f
T
NF
I
C
= -2 mA; V
CE
= -5 V
I
C
= -10 mA; V
CE
= -5 V
V
CB
= -10 V; I
E
= Ie = 0;f = 1 MHz
V
CE
= -5 V; I
C
= -10 mA;f = 100 MHz
I
C
= -200 µA; V
CE
= -5 V;R
S
= 2 kÙ;
f = 1 kHz;B = 200 Hz
100
2
10
4.5
-600
h
FE
I
C
= -2 mA; V
CE
= -5 V
Symbol
I
CBO
I
CBO
I
EBO
Testconditons
V
CB
= -30 V, I
E
= 0
V
CB
= -30 V, I
E
= 0 , T
j
= 150
V
EB
= -5 V, I
C
= 0
125
125
125
220
420
-75
-250
-700
-850
-650
-750
-820
Min
Typ
-1
Max
-15
-4
-100
475
800
250
475
800
-300
-650
mV
mV
mV
mV
mV
mV
pF
MHz
dB
Unit
nA
ìA
nA
h
FE
Classification
TYPE
Marking
TYPE
Marking
TYPE
Marking
BC856
3D
BC857
3H
BC858B
3K
BC856A
3A
BC857A
3E
BC856B
3B
BC857B
3F
BC857C
3G
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
