SMD Type
Transistors
IC
Product specification
KC856A,B/KC857A,B,C/KC858A,B,C
Electrical Characteristics Ta = 25
Parameter
KC856
Collector-base breakdown voltage
KC857
KC858
KC856
Collector-emitter breakdown voltage
KC857
KC858
Emitter-base breakdown voltage
KC856
Collector cut-off current
KC857
KC858
KC856
Collector cut-off current
KC857
KC858
Emitter cut-off current
KC856A, 857A,858A
DC current gain
KC856B, 857B,858B
KC857C,KC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Transition frequency
V
CE(sat)
I
C
=-100mA, I
B
= -5 mA
V
BE(sat)
I
C
= -100 mA, I
B
= -5mA
C
ob
f
T
V
CB
=-10V,f=1MHz
V
CE
= -5 V, I
C
= -
10mA,f=100MHz
100
h
FE
V
CE
= -5V, I
C
= -2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= -10ìA, I
C
=0
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
V
CE
= -25 V , I
B
=0
V
EB
= -5 V , I
C
=0
120
220
420
-0.1
250
475
800
-0.5
-1.1
4.5
V
V
pF
MHz
A
-0.1
A
-0.1
A
V
CEO
I
c
= -10 mA, I
B
=0
V
CBO
I
c
= -10ìA, I
E
=0
(BC856A,B/BC857A,B,C/BC858A,B,C)
Symbol
Testconditons
Min
-80
-50
-30
-65
-45
-30
-5
Typ
Max
Unit
V
V
V
Marking
NO.
Marking
NO.
Marking
NO.
Marking
KC856A
3A
KC857A
3E
KC858A
3J
KC856B
3B
KC857B
3F
KC858B
3K
KC857C
3G
KC858C
3L
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
