Product specification
BAV99
SOT-23
Unit: mm
Features
3
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Small plastic SMD package.
+0.1
2.4
-0.1
High switching sped: max.4 ns.
Repetitive peak forward current: max.450 mA.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
+0.05
0.1
-0.01
3
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
1
2
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded *)
---------------------------------(double
diode loaded *)
Repetitive peak forward current
Non-repetitive peak forward current Tj=25
t=1 s
t=1ms
t=1s
power dissipation *
Thermal resistance from junction to tie-point
Thermal resistance from junction to ambient *
Junction Temperature
Storage Temperature Range
* Device mounted on an FR4 printed-circuit board.
P
D
R
th j-tp
R
th j-a
T
j
T
stg
I
FSM
Symbol
V
RRM
V
R
I
F
I
FRM
Rating
85
75
215
125
450
4
1
0.5
250
360
500
150
-65 to +150
mW
K/W
K/W
A
Unit
V
V
mA
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Test conditions
Max
Unit
I
F
=1 mA
Forward voltage
V
F
I
F
=10 mA
I
F
=50 mA
I
F
=150 mA
V
R
=25 V
Reverse current
I
R
V
R
=75 V
V
R
=25 V; Tj= 150
V
R
=75 V; Tj= 150
Diode capacitance
Reverse recovery time
Forward recovery voltage
C
d
t
rr
V
fr
V
R
=0 V, f= 1 MHz
when switched from I
F
= 10 mA to
I
R
=10mA;R
L
=100 ; measured at I
R
= 1mA
I
F
= 10 mA, tr= 20 ns
715
855
1
1.25
30
1
30
50
1.5
4
1.75
mV
mV
V
V
nA
A
A
A
pF
nS
V
■
Marking
Marking
A7w
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
