Product specification
BAV23S
SOT-23
Unit: mm
Features
Small plastic SMD package
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
1
2
+0.1
1.3
-0.1
Switching speed: max. 50 ns
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
3
1.Base
2.Emitter
3.collector
1
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current (single diode loaded *)
(double diode loaded *)
Repetitive peak forward current
Non-repetitive peak forward current (T
j
= 25
℃
) t=1us
t = 100us
t =10ms
power dissipation (T
amb
= 25
℃
) *
thermal resistance from junction to tie-point
thermal resistance from junction to ambient *
Storage temperature
Junction temperature
* Device mounted on an FR4 printed-circuit board.
P
D
R
th j-tp
R
th j-a
T
st g
T
j
I
FSM
I
FRM
Symbol
V
RRM
V
R
I
F
Rating
250
200
225
125
625
9
3
1.7
250
360
500
-65 to +150
150
mW
K/W
K/W
℃
℃
A
mA
Unit
V
V
mA
■
Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol
V
F
I
R
C
d
t
rr
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200V; T
j
= 150
℃
f = 1 MHz; V
R
= 0 V;
when switched from I
F
=30 mA to I
R
= 30 mA;
R
L
= 100
Ω
;
measured at I
R
= 3 mA;
Conditions
Max
1.0
1.25
100
100
5
50
Unit
V
V
nA
mA
pF
ns
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
