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BAS85 参数 Datasheet PDF下载

BAS85图片预览
型号: BAS85
PDF下载: 下载PDF文件 查看货源
内容描述: 低正向电压高击穿电压保护环 [Low forward voltage High breakdown voltage Guard ring protected]
分类和应用: 二极管
文件页数/大小: 2 页 / 135 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号BAS85的Datasheet PDF文件第2页  
Product specification
1BAS85
Features
Low forward voltage
High breakdown voltage
Guard ring protected
LL-34
Unit: mm
2.64REF
0.50
0.30
1.60
1.30
3.70
3.30
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
average forward current (V
RWM
= 25 V; a = 1.57; ä = 0.5)
repetitive peak forward current (tp
1 s; ä
0.5)
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
R
th j-a
T
amb
T
j
T
stg
Rating
30
200
200
300
5
320
-65 to +125
125
-65 to +150
Unit
V
mA
mA
mA
A
K/W
non-repetitive peak forward current (t
p
= 10 ms)
thermal resistance from junction to ambient
operating ambient temperature
junction temperature
storage temperature
Electrical Characteristics Ta = 25
Parameter
Symbol
I
F
= 0.1 mA
I
F
= 1 mA
forward voltage
V
F
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
reverse current
diode capacitance
* Pulsed test: t
p
= 300 ìs; ä = 0.02.
I
R
C
d
V
R
= 25 V *
f = 1 MHz; V
R
= 1 V
Testconditons
Max
240
320
400
500
800
2.3
10
A
pF
mV
Unit
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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