SMD Type
Product specification
KO3402
(AO3402)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D
=250
Testconditons
A, V
GS
=0V
Min
30
1
A
V
DS
=24V, V
GS
=0V ,TJ=55
V
DS
=0V, V
GS
=
V
DS
=V
GS
I
D
=250
V
GS
=10V, I
D
=4A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
V
GS
=4.5V, I
D
=3A
V
GS
=2.5V, I
D
=2A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1A,V
GS
=0V
0.8
I
F
=4A, d
I
/d
t
=100A/
I
F
=4A, d
I
/d
t
=100A/
s
s
V
GS
=10V, V
DS
=15V, R
L
=3.75
,R
GEN
=6
V
GS
=4.5V, V
DS
=15V, I
D
=-4A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=4A
10
8
390
54.5
41
3
4.34
0.6
1.38
3.3
1
21.7
2.1
12
6.3
2.5
1
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
V
T
J
=125
12V
A
0.6
1
45
66
55
83
5
100
1.4
55
80
70
110
m
m
A
S
pF
pF
pF
nA
V
m
Typ
Max
Unit
V
V
DS
=24V, V
GS
=0V
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
