SDMIPDTTyyppee
MOSFICET
SDMIPDTTyyppee
MOSFICET
Product specification
75N08
TO-220
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(0.70)
■ Features
●
VDS=75V,RDS(on)=0.009Ω@VGS=10V,ID=30A
VDS=75V,RDS(on)=0.011Ω@VGS=4.5V,ID=20A
●
(1.00x45°)
MAX1.47
0.80 ±0.10
1 2
3
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
1 Gate
9.40 ±0.20
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain- Source Voltage
Symbol
VDS
ID
Rating
Unit
75
±75
±66
±240
250
±20
±75
280
V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current*1
A
ID
IDM
℃
PD
W
V
Power Dissipation Ta = 25
Gate-to-Source Voltage
VGS
IAR
Avalanche Current*1
A
Repetitive Avalanche Energy*1
Junction-to-Case
EAR
RθJC
RθJA
TJ,TSTG
mJ
0.6
℃
/W
62.5
Junction-to-Ambient
℃
Operating Junction and Storage Temperature Range
-55 to + 175
*1 Duty Cycle
≤ 1％
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TYSEMI [ TY Semiconductor Co., Ltd ]
