SMD Type
Transistors
IC
Product specification
2SD2351
Features
High DC current gain.
High emitter-base voltage. (V
CBO
=12V)
Low saturation voltage.
(Typ. V
CE(sat)
=0.3V at I
C
/I
B
=50mA/5mA)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
60
50
12
0.15
0.2
0.2
150
-55 to +150
Unit
V
V
V
A(DC)
A(Pulse)*
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=10ìA
I
C
=1mA
I
E
=10ìA
V
CB
=50V
V
EB
=12V
Testconditons
Min
60
50
12
0.3
0.3
0.3
820
250
3.5
2700
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=50mA/5mA
h
FE
f
T
C
ob
V
CE
/I
C
=5V/1mA
V
CE
=5V, I
E
=-10mA, f=100MHz
V
CB
=5V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
h
FE
BJV
820 1800
BJW
1200 2700
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
