SMD Type
Transistors
IC
Product specification
2SD2230
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High hFE and high current.
Low V
CE(sat)
.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current(dc)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D
P
T
T
j
T
stg
Rating
16
16
5
500
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage
Output capacitance
Gain bandwidth product
* Pulsed: PW
350 µs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
1
h
FE
2
V
BE
Testconditons
V
CB
= 16 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 100 mA
V
CE
= 1.0 V, I
C
= 500 mA
V
CE
= 1.0 V, I
C
= 10 mA
200
200
550
33
150
700
50
200
15
50
mV
mV
mV
pF
MHz
Min
Typ
Max
100
100
Unit
nA
nA
V
CE(sat) 1
I
C
= 100 mA, I
B
= 10 mA
V
CE(sat) 2
I
C
= 500 mA, I
B
= 20 mA
C
ob
f
T
V
CB
= 10 V, I
E
= 0 , f = 1.0 MHz
V
CE
= 1.0 V, I
E
= -100 mA
Marking
Marking
D46
0-0.1
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