SMD Type
Transistors
IC
Product specification
2SD1935
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
15
15
5
0.8
3
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 12V , I
E
= 0
V
EB
= 4V , I
C
= 0
V
CE
= 2V , I
C
= 50mA
V
CE
= 2V , I
C
= 50mA
V
CB
= 10V , f = 1MHz
135
200
10
10
100
0.9
15
15
5
25
200
1.2
Min
Typ
Max
100
100
900
MHz
pF
mV
mV
V
V
V
V
Unit
nA
nA
V
CE(sat)
I
C
= 5mA , I
B
= 0.5mA
V
CE(sat)
I
C
= 400mA , I
B
= 20mA
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
V
BE(sat)
I
C
= 400mA , I
B
=20mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
h
FE
Classification
Marking
Rank
hFE
135
5
270
200
6
400
300
CT
7
600
450
8
900
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
