SSMMDD TTyyppee
Transistors
Product specification
2SD1623
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
VCB = 50 V, IE=0
Min
100
Typ
Max
100
100
560
Unit
nA
Collector cutoff current
Emitter cutoff current
VEB = 4 V, IC=0
nA
DC current gain
VCE = 2 V , IC = 100 mA
VCE = 10 V , IC = 50 mA
VCB = 10 V , f = 1.0MHz
Gain bandwidth product
fT
150
12
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 1 A , IB = 50 mA
VBE(sat) IC = 1 A , IB = 50 mA
V(BR)CBO IC = 10ìA , IE = 0
0.15
0.9
0.4
1.2
V
60
50
6
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Turn-on timie
Storage time
Turn-off time
ton
60
550
30
ns
ns
ns
tstg
tf
hFE Classification
DF
Marking
Rank
hFE
R
S
T
U
100 200
140 280
200 400
280 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
