SMD Type
Transistors
Product specification
2SD1614
Features
World standard miniature package.
High dc current gain.
Low V
CE(sat)
.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
* Pulse Test PW
10ms, Duty Cycle
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
50%.
Rating
40
20
6
2
3
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 30 V, I
E
= 0 A
V
EB
= 6.0 V, I
C
= 0 A
V
CE
= 2.0 V, I
C
= 100 mA
135
350
0.3
0.95
650
680
200
28
Min
Typ
Max
100
100
600
0.5
1.2
750
V
V
mV
MHz
pF
Unit
nA
nA
V
CE(sat)
I
C
= 2 A, I
B
= 50 mA
V
BE(sat)
I
C
= 2 A, I
B
= 50 mA
V
BE
f
T
C
ob
V
CE
= 6.0 V, I
C
= 100 mA
V
CE
= 10 V, I
E
= -50 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
h
FE
Classification
Marking
hFE
XM
135 270
XL
200 400
XK
300 600
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TYSEMI [ TY Semiconductor Co., Ltd ]
