SMD Type
Transistors
Product specification
2SD1256
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
Features
Low collector-emitter saturation voltage V
CE(sat).
+0.2
9.70
-0.2
Large collector current I
C.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
Satisfactory linearity of forward current transfer ratio h
FE.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
T
j
T
stg
Ta = 25
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
130
80
7
5
10
1.3
40
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= 10mA, I
B
= 0
V
CB
= 100 V,I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 2 A
V
CE
= 2 V, I
C
= 0.1 A
V
CE(sat)
I
C
= 2 A, I
B
= 0.2 A
V
BE(sat)
I
C
= 2 A, I
B
= 0.2 A
f
T
t
on
t
stg
t
f
I
C
= 2 A,I
B1
= -I
B2
= 0.2 A, V
CC
= 50 V
V
CE
= 10 V, I
C
= 0.5 A , f = 10 MHz
30
0.5
1.5
0.15
90
45
0.5
1.5
V
V
MHz
ìs
ìs
ìs
Min
80
10
50
260
Typ
Max
Unit
V
ìA
ìA
h
FE
Classification
Rank
h
FE
Q
90 180
P
130 260
3
.8
0
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