SMD Type
Transistors
IC
Product specification
2SD1250
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
+0.2
9.70
-0.2
+0.15
0.50
-0.15
Low collector-emitter saturation voltage V
CE(sat)
+0.1
0.80
-0.1
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
T
C
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
200
150
6
2
3
1.3
30
150
-55 to +150
W
W
Unit
V
V
V
A
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
BE
V
CE(sat)
f
T
Testconditons
I
C
= 500 ìA, I
E
= 0
I
C
=5 mA, I
B
= 0
I
E
= 500 ìA, I
C
= 0
V
CB
= 200 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 400 mA
V
CE
= 10 V, I
C
= 400 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
60
50
1.0
1.0
V
V
MHz
Min
200
150
6
50
50
240
Typ
Max
Unit
V
V
V
ìA
ìA
h
FE
Classification
Rank
hFE
Q
60 to 140
P
100 to 240
3
.8
0
High forward current transfer ratio h
FE
which has satisfactory linearity
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TYSEMI [ TY Semiconductor Co., Ltd ]
