SMD Type
Transistors
IC
Product specification
2SD1001
Features
World standard miniature package:SOT-89.
High collector-emitter voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
* Pulse Test PW
10ms, Duty Cycle
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
80
80
5
300
500
2.0
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 80 V, I
E
= 0 A
V
EB
= 5.0 V, I
C
= 0 A
V
CE
= 1.0 V, I
C
= 50 mA
V
CE
= 2.0 V, I
C
= 300 mA
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA
V
BE
f
T
C
ob
V
CE
= 6.0 V, I
C
= 10 mA
V
CE
= 6.0 V, I
E
= -10 mA
V
CB
= 6 V, I
E
= 0, f = 1.0 MHz
600
90
30
200
80
0.15
0.86
645
140
70
0.6
1.2
700
V
V
mV
MHz
pF
Min
Typ
Max
100
100
400
Unit
nA
nA
h
FE
Classification
Marking
hFE
EM
90 180
EL
135 270
EK
200 400
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
