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2SC5211 参数 Datasheet PDF下载

2SC5211图片预览
型号: 2SC5211
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压VCEO = 50V 。小包装的mounting.Collector - 基极电压VCBO 55 V [High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 127 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
SMD Type
SMD Type
Transistors
IC
Product specification
2SC5211
Features
High voltage V
CEO
=50V.
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
T
j
T
stg
Rating
55
4
50
600
400
500
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
Min
55
4
50
1
1
90
0.15
150
500
0.5
V
MHz
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
=10ìA,I
E
=0
V
(BR)EBO
I
E
=10ìA,I
C
=0
V
(BR)CEO
I
C
=100ìA,R
BE
=
I
CBO
I
EBO
h
FE
V
CB
=25V,I
E
=0
V
EB
=2V,I
C
=0
V
CE
=4V,I
C
=100mA
V
CE(sat)
I
C
=200mA,I
B
=10mA
f
T
V
CE
=6V,I
E
=-10mA
h
FE
Classification
Marking
hFE
TD
90 180
TE
150 300
TF
250 500
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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