SMD Type
SMD Type
Transistors
IC
Product specification
2SC5209
Features
High voltage V
CEO
=50V.
Small package for mounting.
High h
FE
= 600 to 1800.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
T
j
T
stg
Rating
50
6
50
2
1
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
50
6
50
0.1
0.1
600
.15
130
12
1800
0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
=10ìA,I
E
=0
V
(BR)EBO
I
E
=10ìA,I
C
=0
V
(BR)CEO
I
C
=1mA,R
BE
=
I
CBO
I
EBO
h
FE
V
CB
=40V,I
E
=0
V
EB
=2V,I
C
=0
V
CE
=6V,I
C
=100mA
V
CE(sat)
I
C
=500mA,I
B
=10mA
f
T
C
ob
V
CE
=10V,I
E
=-10mA
V
CB
=10V,I
E
=0,f=1MHz
h
FE
Classification
Marking
hFE
RH
600 1200
RJ
900 1800
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