SMD Type
SMD Type
Transistors
Transistors
IC
Product specification
2SC4672
SOT-89
+0.1
4.50
-0.1
+0.1
1.50
-0.1
Unit: mm
1.80
+0.1
-0.1
+0.1
2.50
-0.1
Features
Excellent DC Current Gain Characteristics
Complements the 2SA1797
+0.1
0.80
-0.1
Low Saturation Voltage, Typically V
CE(sat)
= 0.1V at I
C
/I
B
= 1A/50mA
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
4.00
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
6
3
6
Collector Power Dissipation
Jumction temperature
Storage temperature Range
*1 Single Pulse, P
W
= 10ms
*2 40 x 40 x
t
0.7mm Ceramic board
P
C
T
j
T
stg
0.5
2 *2
150
-55 to +150
Unit
V
V
V
A (DC)
A (Pulse) *1
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transistion frequency
Collector Output Capacitance
* Measured using pulse current.
Symbol
I
CBO
I
EBO
V
CB
= 60V
V
EB
= 5V
60
50
6
*
*
*
82
45
0.13
210
25
0.35
V
MHz
pF
270
Testconditons
Min
Typ
Max
0.1
0.1
Unit
A
A
V
V
V
V
(BR)CBO
I
C
= 50uA
V
(BR)CEO
I
C
= 1mA
V
(BR)EBO
I
E
= 50uA
h
FE
V
CE
= 2V , I
C
= 0.5A
V
CE
= 2V , I
C
= 1.5A
V
CE(sat)
I
C
= 1A , I
B
= 50mA
f
T
C
ob
V
CE
= 2V , I
E
= -0.5A , f = 100MHz
V
CB
= 10V , I
E
= 0 , f = 1MHz
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
