SMD Type
Transistors
IC
Product specification
2SC4666
Features
High h
FE
: h
FE
= 600 3600
High voltage: V
CEO
= 50 V
High collector current: I
C
= 150 mA (max)
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
150
30
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 6 V, I
C
= 2 mA
600
0.12
100
250
3.5
0.5
0.3
Min
Typ
Max
0.1
0.1
3600
0.25
V
MHz
pF
dB
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
f
T
C
ob
NF(1)
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA, f = 100 Hz,Rg =
10 kÙ
V
CE
= 6 V, I
C
= 0.1 mA, f = 1 kHz,Rg =
10 kÙ
Noise figure
NF(2)
h
FE
Classification
Marking
Rank
hFE
A
600 1800
P
B
1200 3600
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
