SMD Type
Transistors
Product specification
2SC4615
Electrical Characteristics Ta = 25
Parameter
Collector cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain-Bandwidth product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Output capacitance
Turn-ON Time
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
c
ob
t
on
Testconditons
V
CB
=300V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=100mA
V
CE
=10V,I
C
=50mA
I
C
=200mA,I
B
=20mA
I
C
=200mA,I
B
=20mA
I
C
=10ìA,I
E
=0
I
C
=1mA,R
BE
=
I
E
=10ìA,I
C
=0
V
CB
=30V,f=1MHz
400
400
5
8
11
40
70
1
1
Min
Typ
Max
1
1
200
MHz
V
V
V
V
V
pF
Unit
ìA
ìA
Storage Time
t
stg
4
ìs
Fall Time
t
r
Unit (Resistance:Ù ,Capacitance:F)
0.65
h
FE
Classification
TYPE
hFE
C
40 to 80
D
60 to 120
E
100 to 200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
