SMD Type
Transistors
IC
Product specification
2SC4521
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 45V, I
E
=0
V
EB
= 2V, I
C
=0
V
CE
= 2V , I
C
= 500mA
V
CE
= 2V , I
C
= 500mA
V
CB
= 10V , f = 1.0MHz
100
300
25
0.25
0.95
60
45
5
50
100
0.7
1.3
Min
Typ
Max
1
10
400
MHz
pF
V
V
V
V
V
ns
Unit
ìA
ìA
V
CE(sat)
I
C
= 1.5 A , I
B
= 75 mA
V
BE(sat)
I
C
= 1.5 V , I
B
= 75 mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 100ìA , I
C
= 0
t
on
Storage time
t
stg
150
270
ns
Fall time
t
f
180
350
ns
h
FE
Classification
Marking
Rank
hFE
R
100 200
CL
S
140 280
T
200 400
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TYSEMI [ TY Semiconductor Co., Ltd ]
