Product specification
2SC4399
Features
High power gain : PG=25dB typ (f=100MHz).
applied sets to be made small and slim.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
5
30
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Reverse transfer capacitance
Base-collector time constant
Power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
Cre
rbb'Cc
PG
NF
Testconditons
V
CB
= 10V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 6V , I
C
= 1mA
V
CE
= 6V , I
C
= 1mA
V
CB
= 6V, f = 1MHz
V
CB
= 6V, I
C
= 1mA, f = 31.9MHz
V
CB
= 6V, I
C
= 1mA, f = 100MHz
V
CB
= 6V, I
C
= 1mA, f = 100MHz
60
200
320
0.9
12
25
3.0
1.2
20
Min
Typ
Max
0.1
0.1
270
MHz
pF
ps
dB
dB
Unit
ìA
ìA
h
FE
Classification
Marking
Rank
hFE
3
60 120
F
4
90 180
5
135 270
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TYSEMI [ TY Semiconductor Co., Ltd ]
