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2SC4249 参数 Datasheet PDF下载

2SC4249图片预览
型号: 2SC4249
PDF下载: 下载PDF文件 查看货源
内容描述: 高增益: GPE = 24分贝( TYP。) ( F = 200 MHz)的优秀前锋AGC特性 [High gain: Gpe = 24dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 1 页 / 130 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
SMD Type
SMD Type
Transistors
Transistors
IC
IC
IC
Product specification
2SC4249
Features
High gain: G
pe
= 24dB (typ.) (f = 200 MHz)
Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
Excellent forward AGC characteristics
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
30
3
20
10
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Power gain
Noise figure
AGC voltage
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 25 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
30
60
150
0.35
400
20
650
24
2.0
V
CC
= 12 V, G
R
= 30dB, f = 200 MHz
3.6
4.4
28
3.2
5.1
300
0.5
pF
MHz
dB
dB
V
Min
Typ
Max
100
100
Unit
nA
nA
V
V
(BR)CEO
I
C
= 1 mA, I
B
= 0
h
FE
C
re
f
T
G
pe
NF
V
AGC
V
CE
= 10 V, I
C
= 2 mA
V
CB
= 10 V, IE = 0, f = 1 MHz
V
CE
= 10 V, I
C
= 2 mA
V
CC
= 12 V, V
AGC
= 1.4 V,f = 200 MHz
Marking
Marking
HD
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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