SMD Type
Transistors
IC
Product specification
2SC4177
Features
High dc current gain
High voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
60
50
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base emitter voltage *
Gain bandwidth product
Output capacitance
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 60V, I
E
=0
V
EB
= 5V, I
C
= 0
V
CE
= 6V , I
C
= 1.0mA
90
200
0.15
0.86
0.55
0.62
250
3.0
Min
Typ
Max
0.1
0.1
600
0.3
1.0
0.65
V
V
V
MHz
pF
Unit
ìA
ìA
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
V
BE(sat)
I
C
= 100mA, I
B
= 10mA
V
BE
f
T
C
ob
V
CE
= 6V, I
C
= 1.0mA
V
CE
= 6V, I
E
= -10mA
V
CE
= 6V, I
E
= 0, f = 1MHz
h
FE
Classification
Marking
hFE
L4
90 180
L5
135
270
L6
200
400
L7
300
600
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TYSEMI [ TY Semiconductor Co., Ltd ]
