SMD Type
Transistors
Product specification
2SC4132
Features
High breakdown voltage
Low collector output capacitance
High transition frequency Ft=80MHz)
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
CollectorPower Dissipation
Junotion Temperature
storage Temperature
*1 Single pulse pw=10ms
*2 When mounted on a 40X40X0.7 mm ceramic board.
P
C
T
J
T
stg
Rating
120
120
5
2
3
0.5
2
150
-55 to 150
Unit
V
V
V
A
A *1
W *2
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter out current
Emitter-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
B
VCBO
B
VCEO
B
VEBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=100V
V
EB
=4V
I
C
/I
B
=1A/0.1A
V
CE
/I
C
=5V/0.1A
V
CE
=5V.I
E
=-0.1A,f=30MHz
V
CB
=10V,I
E=
0A,f=1MHz
82
80
20
Testconditons
Min
120
120
5
1
1
0.4
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
h
FE
Classification
TYPE
Rank
Marking
CBP
P
82 to 180
CBQ
Q
120 to 270
CBR
R
180 to390
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TYSEMI [ TY Semiconductor Co., Ltd ]
