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2SC4003 参数 Datasheet PDF下载

2SC4003图片预览
型号: 2SC4003
PDF下载: 下载PDF文件 查看货源
内容描述: 高击穿电压收养MBIT过程中出色的线性度的hFE [High breakdown voltage Adoption of MBIT process Excellent hFE linearity]
分类和应用:
文件页数/大小: 2 页 / 72 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4003的Datasheet PDF文件第1页  
SMD Type
Transistors
Product specification
2SC4003
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
DC current Gain
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Symbol
I
CBO
I
EBO
h
FE
fT
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
c
ob
c
re
t
on
t
off
Testconditons
V
CB
=300V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=50mA
V
CE
=30V,I
C
=10mA
I
C
=50mA,I
B
=5mA
I
C
=50mA,I
B
=5mA
I
C
=10ìA,I
E
=0
I
C
=1mA,R
BE
=
I
E
=10ìA,I
C
=0
V
CB
=30V,f=1MHz
V
CB
=30V,f=1MHz
see specified Test Circuit
400
400
5
4
3
0.25
5
60
70
0.6
1.0
Min
Typ
Max
0.1
0.1
200
MHz
V
V
V
V
V
pF
pF
ìs
ìs
Unit
ìA
ìA
Switching Time Test Circuit
h
FE
Classification
Marking
hFE
D
60 to 120
E
100 to 200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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