SMD Type
Transistors
IC
Product specification
2SC3837K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High transition frequency. (Typ. fT = 1.5GHz)
Small r
bb
'.Cc and high gain. (Typ. 6ps)
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
30
18
3
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Collector-base time constant
Noise factor
Output capacitance *
Transition frequency
* Measured using pulse current.
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
I
C
=10ìA
I
C
=1mA
I
E
=10ìA
V
CB
=20V
V
EB
=10V
Testconditons
Min
30
18
3
0.5
0.5
0.5
56
6
4.5
0.9
600
1500
1.5
180
13
ps
dB
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
V
CE(sat)
I
C
/I
B
=20mA/4mA
h
FE
r
bb
'.Cc
NF
C
ob
f
T
V
CE
=10V, I
C
=10mA
V
CB
= 10V , I
C
= 10mA , f = 31.8MHz
V
CE
=12V,I
C
=2mA,f=200MHz,R
g
=50
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
E
= 10mA, f=200MHz
h
FE
Classification
Marking
Rank
h
FE
56
ACN
N
120
82
ACP
P
180
+0.1
0.38
-0.1
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
