SMD Type
Product specification
2SC3803
Features
High Transition Frequency: f
T
= 200MHz(typ.)
Low Collector Output Capacitance: C
ob
= 3.5pF(typ.)
Complementary to 2SA1483
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on a ceramic substrate (250 mm
2
x 0.8t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C *
T
j
T
stg
Rating
60
45
5
200
50
500
1.0
150
-55 to +150
Unit
V
V
V
mA
mA
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Input Impedance (real part)
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 45V , I
E
= 0
V
EB
= 5V , I
C
= 0
V
CE
= 1V , I
C
= 10mA
V
CE
= 3V , I
C
= 200mA
V
CE(sat)
I
C
= 100mA , I
B
= 10mA
V
BE(sat)
I
C
= 100mA , I
B
= 10mA
f
T
R
e(hie)
C
ob
t
on
t
stg
t
f
See Test Circuit.
V
CE
= 10V , I
C
= 10mA
V
CB
= 10V , I
E
= -10mA , f = 200MHz
V
CB
= 10V , I
E
= 0 , f = 1MHz
3.5
40
250
30
100
200
120
5
pF
ns
ns
ns
40
20
0.3
1
V
V
MHz
Min
Typ
Max
0.1
0.1
240
Unit
uA
uA
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
