SMD Type
Transistors
IC
Product specification
2SC3707
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Possible with the small current and low voltage
High transition frequency fT
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
10
7
2
10
50
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
|S
21e
|
2
G
UM
NF
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 1 V, I
C
= 1 mA
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
V
CB
= 1 V, I
E
= 0, f = 1 MHz
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
50
4
0.4
6.0
15
3.5
Min
Typ
Max
1
1
150
GHz
pF
dB
dB
dB
Unit
ìA
ìA
Marking
Marking
2X
0-0.1
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
