SMD Type
Transistors
IC
Product specification
2SC3663
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @V
CE
= 1 V, I
C
= 250 PA, f = 1.0 GHz
G
A
= 3.5 dB TYP. @V
CE
= 1 V, I
C
= 250 PA, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment cordless phones, etc.
Gold electrode gives high reliability.
0-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Features
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Mini mold package, ideal for hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
15
8
2
5
50
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
Associated Power Gain
Collector Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
|S
21e
|
2
MAG
NF
G
A
C
Testconditons
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 250 PA, pulse
V
CE
= 1 V, I
C
= 1 mA
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 250 ìA, f = 1.0 GHz
V
CE
= 1 V, I
C
= 250 ìA, f = 1.0 GHz
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
4.0
50
100
4
6.5
12.5
3.0
3.5
0.4
0.6
4.5
Min
Typ
Max
0.1
0.1
250
GHz
dB
dB
dB
dB
pF
Unit
ìA
ìA
Marking
Marking
R62
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TYSEMI [ TY Semiconductor Co., Ltd ]
