SMD Type
Product specification
2SC3649
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C *
T
j
T
stg
Rating
180
160
6
1.5
2.5
500
1.5
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 120V , I
E
= 0
V
EB
= 4V , I
C
= 0
180
160
6
100
80
0.13
0.85
120
14
40
See Test Circuit.
1.2
80
0.45
1.2
V
V
MHz
pF
ns
us
ns
400
Min
Typ
Max
1
1
Unit
uA
uA
V
V
V
V
(BR)CBO
I
C
= 10uA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10uA , I
C
= 0
h
FE
V
CE
= 5V , I
C
= 100mA
V
CE
= 5V , I
C
= 10mA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
f
T
C
ob
t
on
t
stg
t
f
V
CE
= 10V , I
C
= 50mA
V
CB
= 10V , I
E
= 0 , f = 1MHz
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TYSEMI [ TY Semiconductor Co., Ltd ]
