SMD Type
Transistors
IC
Product specification
2SC3585
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
NF 1.8 dB TYP. @f = 2.0 GHz
Ga 9 dB TYP. @f = 2.0 GHz
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
20
10
1.5
35
200
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
*1. Pulse Measurement PW
350ìs, Duty Cycle
Symbol
I
CBO
I
EBO
h
FE
*1
fT
Cre *2
|S
21e
|
2
MAG
NF
2%
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 6 V, I
C
=10 mA
V
CE
= 6 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 5 mA, f = 2.0 GHz
6.0
50
100
10
0.3
8.0
10
1.8
3.0
0.8
Min
Typ
Max
1.0
1.0
250
GHz
pF
dB
dB
dB
Unit
ìA
ìA
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Marking
Rank
h
FE
R43
R43/Q
50 100
R44
R44/R
80 160
R45
R45/S
125 250
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
