Product specification
2SC3518-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low V
CE(sat)
.
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
High DC current gain.
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Total power dissipation *2
Junction temperature
Storage temperature
*1 PW
10 ms, duty cycle
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
60
60
7
5
7
2
150
-55 to +150
Unit
V
V
V
A
A
W
*2 When mounted on ceramic substrate of 7.5cm
2
X0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 50V, I
E
=0
V
EB
= 7V, I
C
=0
V
CE
= 1V , I
C
= 2A
V
CE
= 1V , I
C
= 5A
V
CE(sat)
I
C
= 2A , I
B
= 0.2A
V
BE(sat)
I
C
= 2A , I
B
= 0.2A
f
T
t
on
t
stg
t
off
V
CE
= 10V , I
E
= 500mA
V
CC
= 10V, R
L
=5Ù
I
C
= 2A ,
I
B1
= -I
B2
= 0.2A
120
0.07
0.8
0.12
1
2.5
1
100
50
0.3
1.2
V
V
MHz
ìs
ìs
ìs
Min
Typ
Max
10
10
400
Unit
ìA
ìA
V
h
FE
Classification
Marking
hFE
M
100 200
L
150 300
200
K
400
3
.8
0
Fast switching speed.
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
