SMD Type
Transistors
IC
Product specification
2SC3513
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
Features
+0.1
1.3
-0.1
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
11
2
500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Symbol
V
(BR)CBO
I
CEO
I
EBO
I
CBO
h
FE
C
ob
fT
PG
NF
Testconditons
I
C
= 10 mA, I
E
= 0
V
CE
= 10 V, R
BE
=
V
EB
= 1 V, I
C
= 0
V
CB
= 12 V, I
E
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
CE
= 5 V, I
C
= 20 mA,f = 900 MHz
V
CE
= 5 V, I
C
= 5 mA,f = 900 MHz
50
120
1.0
6.0
10
1.6
Min
15
1
1
1
250
1.5
pF
GHz
dB
dB
Typ
Max
Unit
V
ìA
ìA
ìA
Marking
Marking
IS-
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
