SMD Type
Transistors
IC
Product specification
2SC3356
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
NF = 1.1 dB Typ., G
a
= 11 dB Typ. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High power gain.
MAG = 13 dB Typ. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
+0.1
1.3
-0.1
Low noise and high gain.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Rating
20
12
3.0
100
200
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW
350
s, Duty Cycle
Symbol
I
CBO
I
EBO
h
FE
S
21e
NF
C
re
f
T
2%.
2
Testconditons
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 10 V, I
C
= 20 mA
Min
Typ
0-0.1
Max
1.0
1.0
Unit
A
A
50
120
11.5
1.1
0.55
7
250
dB
2.0
1.0
dB
pF
GHz
h
FE
Classification
Marking
Rank
h
FE
50
R23
Q
100
80
R24
R
160
125
R25
S
250
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
