SMD Type
Transistors
Product specification
2SC3295
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High h
FE
: h
FE
= 600 3600.
High voltage: V
CEO
= 50 V.
High collector current: I
C
= 150 mA (max).
Small package.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
50
50
5
150
30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 6 V, I
C
= 2 mA
600
0.12
100
250
3.5
0.5
0.3
Min
Typ
Max
0.1
0.1
3600
0.25
V
MHz
pF
dB
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
f
T
C
ob
NF(1)
NF(2)
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA, f = 100 Hz, Rg = 10kÙ
V
CE
= 6 V, I
C
= 0.1 mA, f = 100 Hz, Rg = 10kÙ
h
FE
Classification
Marking
hFE
600
PA
1800
PB
1200 3600
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
