Product specification
2SC3052
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Collector current :I
C
=0.2A
Power dissipation :P
C
=0.15W
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
power dissipation *
Junction temperature
Storage temperature
* . 0.7 mmx16 cm
2
ceramic substrate
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
c
T
j
T
stg
Rating
50
50
6
200
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
NF
f
T
I
C
= 100
I
C
=100
I
E
=100
Testconditons
A,I
E
=0
A,I
B
=0
A,I
C
=0
Min
50
50
6
0.1
0.1
150
50
0.3
1
4
15
180
V
V
pF
dB
MHz
800
Typ
Max
Unit
V
V
V
A
A
V
CB
=50V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=0.1mA
I
C
=100mA,I
B
= 10mA
I
C
= 100mA,I
B
= 10mA
V
CE
=6V, I
E
=0, f=1MHz
V
CE
=6V,I
E
=-0.1mA, f=1KHz, R
G
=2K
V
CE
= 6V, I
C
= 10mA
h
FE
Classification
Marking
Rank
hFE
LE
E
150 to 300
LF
F
250 to 500
LG
G
400 to 800
+0.1
0.38
-0.1
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
