SMD Type
Product specification
2SC2880
Features
High Voltage : V
CEO
= 150V
High Transition Frequency : f
T
= 120MHz(typ.)
Small Flat Package
Complementary to 2SA1200
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature
* Mounted on a ceramic substrate (250 mm
2
x 0.8 t)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
150
200
5
50
10
500
800
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
I
EBO
I
CBO
h
FE
Testconditons
V
EB
= 5V , I
C
= 0
V
CB
= 200V , I
E
= 0
V
CE
= 5V , I
C
= 10mA
70
Min
Typ
Max
0.1
0.1
240
0.5
1
120
3.5
5.0
V
V
MHz
pF
Unit
A
A
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE
f
T
C
ob
V
CE
= 5V , I
C
= 30mA
V
CE
= 30V , I
C
= 10mA
V
CB
= 10V , I
E
= 0 , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
O
70 140
A
Y
120 240
1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
