Product specification
2SC2780
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
■
Features
●
High Collector-emitter voltage.
●
Complements to PNP type 2SA1173
1
0.48±0.1
2
3
0.80±0.1
0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1
4.00±0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
P
C
*
2
T
j
T
stg
Rating
140
140
5
50
2.5
0.5
2
150
-55 to +150
Unit
V
V
V
mA
A
W
W
℃
℃
Collector power dissipation
Junction temperature
Storage temperature
*1. Pw≤10ms,duty cycle
≤50%
*2. When mounted on ceramic substrate of 16cm
2
× 0.7mm
■
Electrical Characteristics Ta = 25℃
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base saturation voltage
Transition frequency
Output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CB
=140V
V
EB
=5V
V
CE
=10V,I
C
=1mA
V
CE
=10V,I
C
=10mA
V
CE(sat)
I
C
=20mA,I
B
=2mA
V
BE(sat)
I
C
=20mA,I
B
=2mA
f
T
C
ob
V
CE
=10V, I
E
= -10mA
V
CB
=10V, I
E
=0A, f=1MHz
50
90
0.07
0.75
120
2.3
180
400
0.6
1.0
V
V
MHz
pF
Test conditons
Min
Typ
Max
0.1
0.1
Unit
μA
μA
■
h
FE
Classification
Marking
h
FE
NM
82½180
NL
120½270
NK
180½390
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TYSEMI [ TY Semiconductor Co., Ltd ]
