Product specification
2SC2776
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
4
30
100
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Gain bandwidth product
Noise figure
Symbol
Testconditons
Min
30
20
4
0.5
35
0.8
1.1
320
5.5
200
1.2
V
pF
MHz
dB
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
I
CBO
h
FE
V
CB
= 10V, I
C
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
C
ob
f
T
NF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 1 MA
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz, Rg = 50 Ù
V
CE
= 6 V, I
C
= 1 mA, f = 100 MHz, R
g
=
100Ù, R
L
= 550Ù
Power gain
PG
17
0-0.1
dB
h
FE
Classification
Marking
Rank
hFE
VA
A
35 70
VB
B
60 120
VC
C
100 200
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TYSEMI [ TY Semiconductor Co., Ltd ]
